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  unisonic technologies co., ltd dtd113z npn silicon transistor  www.unisonic.com.tw 1 of 3 copyright ? 2005 unisonic technologies co., ltd qw-r206-082,c  npn digital transistor (built- in bias resistors) features * built-in bias resistors that implies easy on/off applications. * the bias resistors are thin-film re sistors with complete isolation to allow negative input.  equivalent circuit out gnd out gnd in in r1 r2 sot-23 3 2 1 sot-323 3 2 1 sot-523 3 2 1 *pb-free plating product number:dtd113zl ordering information order number pin assignment normal lead free plating package 1 2 3 packing dtd113z-ae3-r DTD113ZL-AE3-R sot-23 g i o tape reel dtd113z-al3-r dtd113zl-al3-r sot-323 g i o tape reel dtd113z-an3-r dtd113zl-an3-r sot-523 g i o tape reel DTD113ZL-AE3-R (1)packing type (2)package type (1) r: tape reel (2) ae3: sot-23, al3: sot-323, an3: sot-523 (3)lead plating (3) l: lead free plating, blank: pb/sn  marking db3z for sot -23 /sot -323 package d2z for sot -523 package
dtd113z npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-082,c absolute maximum ratings (ta=25c) parameter symbol ratings unit supply voltage v cc 50 v input voltage v in -5 ~ +10 v output current i out 500 ma sot-23/sot-323 200 mw power dissipation sot-523 p c 150 mw junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note absolute maximum ratings are those values beyond which the device c ould be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical specifications (ta=25c, unless others specified) parameter symbol test conditions min typ max unit v in(off) v cc =5v, i out =100a 0.3 input voltage v in(on) v out =0.3v, i out =20ma 1.5 v output voltage v out(on) i out /i in =50ma/2.5ma 0.1 0.3 v input current i in v in =5v 7.2 ma output current i out(off) v cc =50v, v in =0v 0.5 a dc current gain h fe v out =5v, i out =50ma 82 input resistance r 1 0.7 1 1.3 k ? resistor ratio r 2 /r 1 8 10 12 transition frequency f t v ce =10v, i e = ? 50ma, f=100mhz 200 mhz note: transition frequency of the device
dtd113z npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-082,c typical characteristics  100 50 20 10 5 2 1 0. 5 0. 2 0. 1 0.5 1 2 5 10 20 50 100 200 500 output current, i out (ma) input voltage vs. output current (on characteristics) ta=-20 25 100 v out =0.3v input voltage, v in (on) (v) 10m 0 0.5 1.0 1.5 2.0 25 ta=100 -20 v cc =5v 5m 2m 1m 50 ? 200 ? 100 ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 2.5 3.0 output current, i out (a) input voltage, v in(off) (v) output current vs. input voltage (off characteristics)  1k 500 0. 5 1 2 5 10 20 50 100 200 500 output current, i out (ma) -20 25 ta=100 v out =5v 200 100 50 20 10 5 2 1 dc current gain, h fe dc current gain vs. output current 1000 500 0.5 1 2 5 10 20 50 100 200 500 output current, i out (ma) -20 25 ta=100 200 100 100 20 10 5 2 1 output volt age, v out(on) (mv) output voltage vs. output current l out /l in =20 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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